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Kechao Tang is now an assistant professor in the School of Integrated Circuits, Peking University, China. He received his B.S degree from Peking University, China, in 2012, and his Ph.D degree from Stanford University, USA, in 2017. Dr. Tang worked as a postdoctoral researcher in University of California, Berkeley, USA from 2017 to 2020. His current research interest includes emerging non-volatile memory devices, especially ferroelectrics memories based on hafnium oxide, and phase transition materials for novel electrical applications. Dr. Tang has authored more than 60 papers with a total citation over 3600 and an h-index of 25. He published papers as the first or the corresponding author in scientific journals and conferences including Science, Science Advances, Advanced Materials, and IEEE IEDM etc. He is a recipient of 2018 Chinese Government Award for Outstanding Self-financed Students Abroad and 2017 Stanford University Robert A. Huggins Award.
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