Li Weimin 黎微明
Vice President & CTO, Jiangsu Leadmicro Nano-Technology Co., Ltd

个人简介 / Biography



摘要 / Abstract

Atomic Layer Deposition (ALD) is a key technology for deposition of conformal and pinhole-free thin films on the most challenging nano-architectures such as ultra-thin high-k dielectrics, ultra-high aspect ratio trenches, through-silicon vias, nano-powders and through-porous structures. In an ALD process, different chemical precursors are introduced to a substrate surface via saturated surface chemisorption reaction with well-separated pulses, resulting in film growth on sub-nanometer scale. Unlike many other deposition technique, ALD film thickness and composition can be well controlled and adjusted at atomic layer level, enables preparation of highly organized and functional materials, such as graded layer nanolaminates, mixed oxides and tunable semiconductor thin films.

Since the initial deployment of ALD thin film as passivation layer for magnetic reader heads for hard disk drives in the 90’s, ALD technology experienced rapid expansion for data storage applications ranging from low cost HDD to high value added random access memories today. A variety of novel ALD materials and processes have been successfully used for high volume production. Continuous development for higher data storage density and faster data access speed also calls for additional innovation on device structures and integrations with new materials and processes. The authors examine fundamentals of ALD chemistries for some well-known processes that have been used for advanced memory applications. Recent development of domestic ALD technology in advanced memory device manufacturing is highlighted.