* to designate invite talk - 30 min      
  to designate regular talk - 20 min

Monday, June 26, 2023 Shanghai International Convention Center
Meeting Room: 5A

Session I: MEMS and Sensors
Session Chair: Yipeng Lu
13:30-13:35 Opening Remarks
*13:35-14:05 Micromachined Ultrasonic Transducers (MUT) Based on MEMS Technology
  Yipeng Lu, Peking University, China
*14:05-14:35 Broadband Graphene-Silicon Integrated Field-Effect Coupled Detectors
  Yang Xu, Zhejiang University, China
*14:35-15:05 Achieving the ultimate sensitivity of silicon nano transistor based ion sensors
  Zhen Zhang, Uppsala University, Sweden
15:05-15:30 Coffee Break

Session II: Emerging Devices and Sensors
Session Chair: Yang Xu
*15:30-16:00 Universal integration strategy from emerging layered semiconductor to multi-mode devices
  Chen Wang, Tsinghua University
16:00-16:20 Monolithic 3D Integration of Dendritic Neural Network with Memristive Synapse, Dendrite, and Soma on Si CMOS Logic
  Tingyu Li, Tsinghua University, China
16:20-16:40 The fabrication of InAs/InP Nanowire gas sensor by applying semiconductor technology
  Min Bai, Northeastern University, China
16:40-17:00 Differential Evolution with Multivariate Gaussian Sampling for Sensor Arrangement
  Kuiling Du, Northeastern University, China

Tuesday, June 27, 2023 Shanghai International Convention Center
Meeting Room: 5A

Session III: Photonic and Neuromorphic Computing
Session Chair: Alex Gu
*8:45-9:15 Photonic Integrated Circuits using Transparent Conductive Oxides: from Materials and Devices to System Integration
  Alan Wang, Baylor University, USA
*9:15-9:45 Accurate in-memory computing with MRAM device variation-aware adaptive quantization
  Qiming Shao, Hong Kong University of Science and Technology, Hong Kong, China
*9:45-10:15 RRAM-based computation in memory for deep neural networks
  Peng Huang, Peking University, China
Poster Session:
  Near-infrared sensitivity enhancement of CMOS image sensor with Germanium on Silicon structure
  Hui Chen, Shanghai Huali Microelectronics Corporation
  Implantation Optimization in Vertical Transfer Gate Structured for CMOS Image Sensors
  Rukun Gai, Shanghai Huali Microelectronics Corporation
  A Composite Photodetector with Wide Dynamic and Small Area for DVS Applications
  Yaping Chen, Fudan University
  Improve the breakdown voltage of silicon pixel sensor with optimized multi-guard ring
  Peng Sun, Institute of Microelectronics, Chinese Academy of Sciences
  Study on Improvement of Dark Count Rate for Silicon Photomultiplier
  Xing Chen, Semiconductor Manufacturing International Corp.
  Process optimization and performance improvement of CMOS microbolometer with a salicided polysilicon thermistor
  Jiang Lan, Nanjing University
  Investigation of Vertically Stacked Horizontal Gate-All-Around Si Nanosheet Ion Sensitive Field Effect Transistor for Detection of C-reactive Protein
  Yang Liu, Guizhou University
  Develop of high performance and low noise image sensor processor based on 28nm high-K technology
  Chunshan Zhao, Shanghai Huali Microelectronics Corporation
  Flexible strain sensors pacaking
  Chengfeng Huang, East China Normal University
  Simulation Investigation on Performance of GaN-based Multi-Quantum Well Micro-LEDs for Micro-display and Visible Light Communication
  Pengfei Ye, Nanjing University of Posts and Telecommunications