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Hikavyy Andriy was born in Chernivtsi, Ukraine. He received the M.S. degree in Physical Electronics from Chernivtsi State University, Ukraine in 1998 and Ph.D in applied electronics from Ghent University, Belgium in 2003. Between 2003 and 2006 he worked as a researcher at the Department of Solid State Physics of the same university. At the end of 2006 he joined Epitaxy group of Imec where he currently works on selective epitaxial growth of Si and SiGe and its application to advanced technological nodes.
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