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March 14-16,2018
Shanghai New International Expo Centre

Symposium VIII: MEMS, Sensors and Emerging Semiconductor Technologies


(** to designate keynote talk, * to designate invite talk)

Sunday, March 11, 2018 Shanghai International Convention Center
Meeting Room:3I+3J

Session I: Emerging Technologies - I
Session Chairs: Edward Yi Chang/Meikei Ieong

**13:30-14:00 Application driven Technologies Beyond Scaling
  Meikei Ieong, ASTRI, Hong Kong, China
*14:00-14:25 SiGe epitaxial memory for neuromorphic computing
  Jeehwan Kim, MIT, USA
*14:25-14:50 Research Achievements of Key Technologies in 3D Integration and Heterogeneous Integration
  Kuan-Neng Chen, National Chiao Tung University, Taiwan, China
*14:50-15:15 Synthesizing Large-area Two-Dimensional Molybdenum Ditelluride by Physical Vapor Deposition and Solid-phase Crystallization
  Tuo-Hung Hou, National Chiao Tung University, Taiwan, China
15:15-15:30 Coffee Break
   

Session II: Semiconductor Technology in Healthcare
Session Chairs: Jingwei Bai/Kangguo Cheng


*15:30-15:55 Implantable Optoelectronic Devices for Deep-Brain Neural Modulation and Sensing
  Xing Sheng, Tsinghua University, China
*15:55-16:20 Nanostructures for smart systems
  Ray Saupe, Fraunhofer ENAS, Germany
*16:20-16:45 CMOS Integrated Lab-on-chip System for Personalized DNA Sequencing
  Hao Yu, Southern University of Science and Technology, China
*16:45-17:10 The Two-fold Role of Connected Devices — Enabling remote healthcare service delivery & healthcare service innovations
  Zhen Fang, Institute of Electronics, Chinese Academy of Sciences, China
   
Poster Session: Location: 5th Floor    
Coffee Break An improved behavioral simulation model for afterpulsing phenomenon
  Tingchen Zhao, Nanjing University of Posts and Telecommunications
  ESH Benign Epitaxial Wafer Surface Pretreatment Method for Mercury Probe C-V Test
  David Sun, Huaying Research Co., Ltd


Monday, March 12, 2018 Shanghai International Convention Center
Meeting Room: 3I+3J

Session III: MEMS and Sensors-I
Session Chairs: Fuhua Yang/Jingwei Bai

*8:30-8:55 All-silicon Micro-Fabricated High-Temperature High-Pressure Sensor
  Man WONG, The Hong Kong University of Science and Technology, Hong Kong, China
*8:55-9:20 The development of micro-machined based electrochemical seismic sensors
  Junbo Wang, Institute of Electronics, Chinese Academy of Sciences, China
*9:20-9:45 RF MEMS resonant devices for wireless communication
  Jinling Yang, Institute of Semiconductors, CAS, China
*9:45-10:10 MEMS Sensors for Oceanic Applications
  Chenyang Xue, North University of China, China
10:10-10:30 Coffee Break
   

Session IV: Novel Materials, Devices and Processes-I
Session Chairs: Hyungjun Kim/Zhen Zhang


*10:30-10:55 Low-frequency noise originating from the dynamic hydrogen ion reactivity at the solid/liquid interface of ion sensors
  Zhen Zhang, Uppsala University, Sweden
*10:55-11:20 Two dimensional materials for polarizer-free organic light emitting diodes
  Soo Young Kim, Chung-Ang University, Korea
*11:20-11:45 MEMS Inertial Sensor
  XUDONG ZOU, Institute of Electronics, CAS, China
11:45-13:30 Lunch Break
   

Session V: Novel Materials, Devices and Processes-II
Session Chairs: Hsiang-Lan Lun/Wu-Ching Chou


*13:30-13:55 Growth and characterization of GaN/AlxGa1-xN heterostructures for the high speed and high power electronic device application
  Wu-Ching Chou, National Chiao Tung University, Taiwan, China
*13:55-14:20 From Carbon to Silicon, MEMS Enables AI Age
  Shaohua Liu, Naura, China
14:20-14:35 ALD Moisture Barrier for Wafer Level and Die Level Encapsulation
  Sami Sneck, Beneq, Finland
14:35-14:50 Study of the Mesa Etched Tri-Gate InAs HEMTs with Extremely Low SS for Low-Power Logic Applications
  Yueh-Chin Lin, National Chiao Tung University, Taiwan, China
14:50-15:05 Coffee Break
   

Session VI: Emerging Technologies - II
Session Chairs: Kangguo Cheng/Bert Brost


*15:05-15:30 Next Generation of WLCPS Contacting Technologies for 250 Micron Pitch and Below
  Bert Brost, Xcerra Corporation
15:30-15:45 Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure
  Suguru Tatsunokuchi, Tokyo Institute of Technology, Japan
15:45-16:00 Study on Sensitivity of the Bilateral Ultra-thick Silicon Sensors as Neutron Dosimeter
  Yahuan Huang, Peking University, China
16:00-16:15 A novel three observation-windows measurement scheme for SPAD Fluorescence Lifetime Imaging Detector
  Ding Li, Nanjing University of Posts and Telecommunications, China
16:15-16:30 Innovative Method for the Analysis of Micor-contamination on Semiconductor Wafer Surfaces
  Jan Wang, Huaying Research Co., Ltd, China