Symposium Chair: Dr. Xiaoping Shi, Akrion Italy
| ** | to designate keynote talk - 30 min | |||
| * | to designate invite talk - 25 min | |||
| to designate regular talk - 15 min |
Sunday, March 22, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Shanghai Ballroom 3
Session I: Device Integration I
Session Chair: Xiaoping Shi
| **13:30-14:00 | Low Dimensional Materials and Devices for Advanced Node Technology |
| Han Wang, University of Hong Kong | |
| **14:00-14:30 | New Advances in large-size GaN Epitaxial Materials |
| Kai Cheng, Enkris Semiconductor | |
| *14:30-14:55 | High-Performance Optical Transmission Chip Based on Thin-Film Lithium Niobate |
| Liu Liu, Zhejiang University | |
| *14:55-15:20 | Selective Area Deposition of 2D Semiconductors and Transistor Integration |
| Yuanyuan Shi, University of Science and Technology of China (USTC) | |
| *15:20-15:45 | Enabling the Continuous Scaling of Advanced CMOS Image Sensors |
| Yunpeng Yin, Lam Research | |
| 15:45-16:00 | Study on Furnace-based ALD SIN Formation Process and Film Quality Improvement |
| Yafang Luo, Beijing NAURA Technology Group Co., Ltd | |
| 16:00-16:15 | The Work Function Adjustment of the Reactive Sputtering Deposition TiN Process |
| Gang Song, Beijing Superstring Academy of Memory Technology | |
| 16:15-16:30 | Coffee Break |
| 16:30-18:00 | Panel Discussion (Meeting Room: Pudong Ballroom 1) |
Monday, March 23, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Shanghai Ballroom 3
Session II: Device Integration II
Session Chair: Chao Zhao
| **08:30-09:00 | Opportunities for CMOS Logic Technology with Dual-sided Integrations: From Lateral to Vertical Transistors |
| Heng Wu, Peking University | |
| *09:00-09:25 | Stacked Vertical Flash with Single-Crystal-Si Channel and Its Applications |
| Huilong Zhu, Beijing X2Chip Technologies | |
| *09:25-09:50 | From FinFET to GAA and CFET: a Comparison Study on the DC and AC Performance |
| Xiaona Zhu, Fudan University | |
| *09:50-10:15 | Application of Aberration-Corrected (AC) STEM for the Failure Analysis of Semiconductor Devices |
| Binhai Liu, Wintech-Nano | |
| 10:15-10:30 | A Dynamic Tunable Optical Color Filter Layer by PEALD Laminated SiOx/TiOx for Advanced CMOS Image Sensor |
| Yuexiang Sun, Advanced Micro-Fabrication Equipment Inc. | |
| 10:30-10:45 | Coffee Break |
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Session III: FEOL Development I
Session Chair: Yunlong Li
| *10:45-11:10 | AI-assisted TCAD automatic calibration solution |
| JunJie Hao, GHS Semiconductor | |
| *11:10-11:35 | Basic Principle and Application of Surface Carbon Clean System |
| Han Wang, Beijing NAURA Technology Group Co., Ltd | |
| 11:35-11:50 | Preparation and Property Tuning of VOx Film for Advanced Application Using Ion Beam Deposition |
| Zichao Li, Jiangsu Leuven Instruments Co. Ltd | |
| 11:50-12:05 | WCVD Stress Impact on Gate Performance |
| Tristan Yang, Lam Research | |
| 12:05-13:30 | Lunch Break |
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Session IV: Packaging Process Development
Session Chair: Jianhua Ju
| *13:30-13:55 | PVD Solutions for Panel-Level Advanced Packaging in Mass Production |
| Xiaojun Zhang, Arrayed Materials (China) Co., Ltd. | |
| *13:55-14:20 | Inter-Die-Gap-Fill (IDGF) in 3DIC Heterogeneous Integration: Challenges and Solutions |
| Ben Zongbin Wang, Applied Materials Singapore | |
| 14:20-14:35 | Opportunities and Challenges of Ultra-Thick Silicon Oxide Thin-Film Deposition Equipment in Advanced Packaging |
| Joe Li, Jiangsu Afilm Semiconductor Technology Co., LTD. | |
| 14:35-14:50 | Solution of High Aspect Ratio TSV PVD in Advanced Packaging |
| Tongwen Zhang, Advanced Micro-Fabrication Equipment Company Inc | |
| 14:50-15:00 | Break Time |
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Session V: BEOL Process development
Session Chair: Chenyu Wang
| *15:00-15:25 | Advanced Interconnects: Better than Cu |
| Yuan Tu, AtomSolve Technology Corp. | |
| 15:25-15:40 | Optimize Current Setting to Reduce Inter-Void Defects in Damascene Copper Interconnects |
| Kristoff Wang, Lam Research | |
| 15:40-15:55 | Study on the Improvement of Silicon Film Trench Fill Capacity and Uniformity |
| Ying Zhang, Beijing NAURA Technology Group Co., Ltd | |
| 15:55-16:10 | Frequency-Tuned RF Power Effects on Plasma Stability in Reactive Sputtering: Validation by Unsupervised Analysis of OES and Impedance Mapping Data |
| Cheng-Yuan Kao, National Central University | |
| 16:10-18:00 | Coffee Break |
| 16:00-18:00 | Poster Session |
Tuesday, March 24, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Function Room 4
Session VI: FEOL Process Technology II
Session Chair: Jiaxiang Nie
| *09:00-09:25 | Atomic Layer Deposition Process Technology: Fundamentals and Applications |
| Xun Gu, Advanced Micro-Fabrication Equipment Inc. | |
| 09:25-09:40 | Influence of Fluorine Radicals from RPS and High-Temperature Environment on the Corrosion Performance of Secondary Remelted 316L Stainless Steel |
| Jiakun Zhu, Piotech | |
| 09:40-09:55 | Synergistic Interface Engineering Enables HZO Capacitors with κ > 70, 0.4 nm EOT and Suppressed Leakage through Morphotropic Phase Boundary |
| Qiang Gao, Shanghai Jiaotong University | |
| 09:55-10:10 | Multi-scale model of HfO2 ALD for improvement of the on-wafer uniformity and the step coverage |
| Linlin Xiao, Suzhou STR Software Technology Co., Ltd. | |
| 10:10-10:40 | Break Time |
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Session VII: FEOL Process Development III
Session Chair: Xun Gu
| *10:40-11:05 | Advances in Atomic Layer Deposition Precursors for IC Applications |
| Xiabin Lou, Origin Materials Tehcnology Co., Ltd | |
| 11:05-11:20 | The Application of a new theory based on thermodynamics to explain the leakage current vs voltage and breakdown characteristics of TiN/ZAZ/TiN MIM capacitors used in DRAMs |
| Wai Shing Lau, Nanyang Technological University (Retired) | |
| 11:20-11:35 | Stress Analysis of STI Structure under Different Gap-Fill Material with Different Corner Rounding Conditions |
| Xiaoxin Li, Lam Research | |
| 11:35-11:50 | ALD TiN Step Coverage Improvement for Ultra-high AR |
| Guobiao Xue, Piotech | |
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| 16:00-18:00 | Poster Session: Monday, March 23 (3F, Kerry Hotel Pudong, Shanghai) |
| 4-5 | Removing PECVD Fluorine Residues of Rluorinated Plasma Clean by In-Situ NH3+N2O Plasma |
| Xin Xu, Lam Research | |
| 4-6 | Study of Film Discoloration and Moisture Influence in Plasam-Enhanced Sub-Atomsphericic Deposition |
| Hui Li, Piotech | |
| 4-7 | Optimization of STI bottom Corner Rounding by In-situ Steam Generation Process in 50nm Device |
| Yuanfeng Xu, GHS Semiconductor Co., Ltd. | |
| 4-10 | Studies of Hydrogen Content and Annealing Effects of High-Density Plasma Chemical Vapor Deposition Silicon Dioxide Film |
| Zhengyang Liu, Lam Research | |
| 4-17 | Backside Deposition Solution for Improved SACVD Film Uniformity |
| Yicheng Xie, Lam Research | |
| 4-18 | Improvement of Thickness Uniformity and Surface Roughness in PECVD SiN Waveguides |
| Kang Lin, Lam Research | |
| 4-19 | Chemical Bonding at the Graphene Films/Cu Substrate Interface for High-Efficiency Heat Dissipation |
| Chenfei Zhou, Suzhou Polytechnic University | |
| 4-21 | Plasma-Assisted Surface Modification for Improved Passivation on Low Temperature PECVD Oxide Film |
| Xinchen Cai, Tsinghua University | |
| 4-22 | Research and Improvement Solutions for Spacer Sidewall Defect Issues in 40nm Stress Memorization Technique Process Optimization |
| Jian Zhu, Shanghai Huali Integrated Circuit Corporation | |
| 4-23 | Stress-Tunable Flowable CVD Process via Gas Composition Modulation and Multi-Stage UV Cure for Strain Engineering in Fin Structures |
| Longqing Mi, Piotech (Shanghai) | |
| 4-27 | Study of Surface Treatment Impacting High-K Film Properties with ALD Method |
| Yanwen Luo, Piotech (Shanghai) | |
| 4-28 | Mask-Less Fabrication of Silicon Through-Via Structure in Nanoscale |
| Yuanwei Lin, Beijing NAURA Technology Group Co., Ltd | |
| 4-29 | Applied Materials® Endura Execta PVD Aluminum Chamber CIP Package for Tool Output Improvement |
| Qijian Deng, Applied Materials | |
| 4-30 | ECVD SiO2 Hard Mask Quality Improvement by Plasma Optimization |
| Dandan Qi, Lam Research | |
| 4-35 | Kinetic Analysis of Interdiffusion Across SiO₂/IGZO and HfO₂/IGZO Interfaces for 3D DRAM Integration |
| Dingting Han, Beijing Superstring Academy of Memory Technology | |
| 4-36 | Optimization of Germanium Epitaxial Process based on Silicon-Germanium Detectors within the Fab's 12-inch Production Line |
| Xuankai Fang, Zhejiang University | |
| 4-39 | Research and Improvement of Low-k Arcing in 28 nm Technology |
| Li Zhang, Shanghai Huali Integrated Circuit Corporation | |
| 4-46 | Modeling Study of SiGe/Si EPI Interface Quality |
| Hao Fu, Suzhou STR Software Technology Co., Ltd. | |
| 4-54 | ILD0 Gap-fill Improvement through Integration Optimization |
| Yiyu Zhang, Applied Materials China | |
| 4-55 | Continuous Particle Performance Improvement for Silicon Nitride Film_Fangfang Zheng |
| Fangfang Zheng, Applied Materials China | |
| 4-57 | Applied Materials® High Deposit Rate Al Chamber for Power Metal Layer |
| Jian Hua, Applied Materials China | |
| 4-58 | DIT Improvement Achieved through the Application of DTI Liner Processed by DPO in CIS Devices |
| Heping Du, Applied Materials China | |
| 4-59 | Yield Improvement by HDP Process and Hardware CIP |
| Wei Xiong, Applied Materials China | |
| 4-60 | Applied Materials ® Volaris Preclean Chamber to Improve UBM-Al Contact Resistivity for Advanced Package |
| Rui Tian, Applied Materials China | |
| 4-61 | Applied Materials® DS TaN High Flow New CIP Recipe for NU% Improvement |
| Xianzhen Zhang, Applied Materials China | |
| 4-62 | DPN and HTO Process on Gate Oxide in SiC MOSFET Mobility Improvement |
| Yulong Liu, Applied Materials China | |
| 4-63 | Analysis and Resolution of Cracking in Passivation HDP USG Layers |
| Congcong Zhao, Applied Materials China | |
| 4-64 | HDPCVD Inline WAT Improvement with Extended Process Window |
| Chao Zheng, Applied Materials China | |
| 4-65 | Incorporated Oxygen-Rich Precursor to Improve SiH4-based FSG Film Stability |
| Xiaoying Wang, Applied Materials China | |
| 4-66 | A Novel Method of Improving HDP STI IPM Gap-fill Ability in Deep Trench |
| Xuecheng Zheng, Applied Materials China | |
| 4-67 | Successful Profile Match between VIISta™ 900 3D and Batch Tool for GaN Device Production |
| CHUNHAO LIU, Applied Materials China | |
| 4-68 | Applied Materials® CentinelTM ALD TiN for MIM Application |
| Guoqing Zhang, Applied Materials China | |
| 4-69 | The Application of Applied Materials® ImpulseTM TaOx Chamber in ReRAM |
| Yue Yang, Applied Materials China | |
| 4-70 | CIP Process Development for HiK Capping Layer Using Applied Materials® AvenirTM LP RF PVD |
| Weiming Yan, Applied Materials China | |
| 4-71 | Contact Barrier Extended to N28+ with Applied Materials® TxZTM CVD TiN Hardware CIP |
| Bin Hu, Applied Materials China | |
| 4-72 | Alternative TiN Process for MG Al Barrier Application |
| Dongdong Wei, Applied Materials China | |
| 4-73 | Innovative Surface Preparation Strategy for Enhancing RC Delay in Co Silicide Applications |
| Wuxiang Li, Applied Materials China | |
| 4-74 | Wide Applications of Applied AvenirTM RF PVD Chamber in Logic Devices |
| Zhen Chen, Applied Materials China | |
| 4-75 | Applied Materials® Endura™ System PBI Feature for High Uptime Improvement |
| Yanqi Liu, Applied Materials China | |
| 4-76 | Systematic Modeling and Total Solution for the Wafer Sliding of APF Hardmask Films |
| Rongrong Tian, Applied Materials China | |
| 4-77 | Applied Materials® VersaTM Chamber Development for TIN Heater in Silicon Photonics |
| Ling Li, Applied Materials China | |
| 4-78 | Applied Materials® Endura2™ System Load Lock Recipe CIP For Local Stress Improvement |
| Jie Zhang, Applied Materials China | |
| 4-80 | Applied Materials® ILB System Application in BEOL Liner and Barrier of Cu-W Scheme |
| Xi Wu, Applied Materials China | |
| 4-81 | Anode Reflectivity Improvement in Micro-OLED |
| Zhenxu Chen, Applied Materials China | |
| 4-82 | Transient Enhanced Diffusion Mitigation with Spike Tres Adjustment |
| Jie Zuo, Applied Materials China | |
| 4-85 | Investigation of The Baking Process on the Substrate Interface and the Epitaxial Growth |
| Yiqun Liu, SUPERALD | |
| 4-88 | Wet Etch Rate (WER) Improvement on HDP USG Process |
| Zhuxin Fan, Lam Research | |
| 4-8 | The Effect of Amorphization Formation under Different Temperature Conditions in Cold Implant Process |
| Yi-long Chen, GHS Semiconductor Co., Ltd | |
| 4-16 | The Influence of ISSG Hydrogen-To-Oxygen Ratio on the Growth of Tunnel Oxide for Nor Flash Memory Cycling Disturb Loss |
| Xing Wang, GHS Semiconductor | |
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