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March 20-22, 2019
Shanghai New International Expo Centre

Symposium II: Lithography and Patterning



Symposium II: Lithography and Patterning
Sponsored by:
 
Symposium Committee

Dr. Kafai LAI
Chair
IBM, USA
   
Dr. Linyong (Leo) Pang
Co-Chair
D2S Inc.
   
Dr. Ken Wu
Co-Chair
SMIC, China
   
Mr. Xiaoming Ma
Member
Dow Chemical
   
Dr. Zhimin Zhu
Member
Brewer Science, USA
   
Dr. Zhibiao Mao
Member
Nata Chemicals
   
Dr. Yayi Wei
Member
IMECAS, China
   
Mr. Motokatsu.Imai
Member
今井 基勝, 水戸工業(株)
   
Hai Deng
Member
Fudan University
   
Wang Yueh
Member
Intel, USA
   
Shiyuan Liu
Member
Huazhong University of Science and Technology , China
   
Dr.Yuyang Sun
Member
Mentor Graphics,USA
   
Dr. David H. Wei
Member
ASML Brion
   
Dr. Chris Progler
Member
Photronics
   

Symposium II: Lithography and Patterning

Resist Material and Processing
  •  Resist fundamentals
  •  Resist Stochastic effects
  •  Cost effective photoresist for volume production
  •  High performance photoresist
  •  Resist adhesion control for advanced process
  •  Advanced processing technology

Optical & EUV lithography
  •  CD and overlay control in process
  •  Immersion Lithography
  •  Defectivity control
  •  Anti-reflection schemes for advanced process
  •  Advanced optical exposure tools and light source
  •  Mask Toporgaphy effects

Computational Lithography
  •  Cost effective RET techniques
  •  Advanced optical imaging modeling
  •  Advanced RET as in EUV, multiple patterning and polarization application
  •  Advanced OPC & Source mask optimization
  •  DFM solutions and Design Technology Co-optimization for 28nm node and beyond
  •  Applying Machine Learning and Artificial Intelligence in Computational Lithography

Emergent Technology
  •  Directed Self-assembly
  •  Direct-write E-beam and parallel E-beam
  •  Nanoimprint
  •  Other novel lithographic techniques and Complementary lithography

Metrology and inspection
  •  Overlay, CD, defect, and topography metrology
  •  Integrated metrology
  •  Advanced process control
  •  Computational Metrology and Inspection
  •  LWR/LER characterization

Mask technology
  •  Cost effective reticles for 28nm node and below
  •  Mask Defect inspection, repair and CD control
  •  Advanced mask blank and EMF effect
  •  MPC for mask for 28nm node and beyond