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Chinese
2018年3月14-16日
上海新国际博览中心

杨盟

杨盟
北京北方华创微电子装备有限公司,刻蚀事业部副总经理

个人简介

After the completion of his Master degree in Materials Physics and Chemistry in Beihang University in 2006, Yang Meng worked for Beijing NAURA Microelectronics Company from 2006 till now. During the 11 years in the NAURA, he developed multiple commercially successful Plasma Dry Etch products, including 8 inch Si etch product, 12 inch 90/65/40/28 Si etch products, 8 inch deep Si etch product, 8 inch Oxide etch product, 8 inch Metal etch product, etc.

摘要

Thanks to the requirement growth of the emerging applications, for example, new energy automobile, Smart power grid, 5G and IoT, the power semiconductors market grows very fast in the recent years. Compared to the traditional power semiconductor devices, the new power devices—such as MOSFET, IGBT, SiC and GaN—bring new requirements and changes to the manufacture. ICP etch is a very important method—which is wildly used in power devices manufacture—can achieve the high etching accuracy, good uniformity, low defect and good profile controlling ability. Many new techniques have been developed and applied, in order to meet the requirements of the new power devices manufacture.