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+86.21.6027.8500
Chinese
2019年3月20-22日
上海新国际博览中心

Dr. Markus Behet

Dr. Markus Behet
比利时 EpiGaN公司,首席市场官

个人简介

Markus joined EpiGaN in 2015 and serves as Chief Marketing Officer. He leads the company’s global commercial and marketing activities for GaN technology solutions. Prior to EpiGaN he held key executive marketing and business development roles in GaN, GaAs and SiC compound semiconductor divisions at Dow Corning, Triquint Semiconductor, Infineon Technologies, Siemens and imec. Markus holds a Ph.D. in semiconductor physics and electrical engineering from Aachen Technical University, Germany.

摘要

Is GaN on Si the enabling technology that will also fuel next generation RF applications like 5G, IOT and displace the incumbent Si and GaAs technologies? You can certainly believe so as GaN on Si RF technology reached performance levels that were still out of reach a few years back. GaN on Si technology has already made inroads as a disruptive technology for 600V power management systems and furthermore fueled many new applications like LIDAR for Autonomous Vehicles, augmented reality and sensor applications- and there is definitely more to come. This presentation will highlight recent advances for EpiGaN’s GaN/Si and GaN/SiC epi wafer technologies for RF applications and discuss the differentiating advantages of in-situ SiN capped AlN barrier for RF power.