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ABSTRACT
STT (spin transfer torque)-MRAM is one of the most promising emerging memory technologies, as evidenced by recent production ready demonstrations from several leading semiconductor companies. In this lecture, I will start with basic magnetics and switching mechanism of STT-MRAM. I will then discuss MTJ structure and key material systems for realizing high performance perpendicular STT-MRAM. Device parameters and trade-off will be introduced for different applications such as embedded flash replacement and higher speed cache application, followed by the discussion of key integration process challenges. Finally, I will conclude with a mini-review of recent MRAM technology development progress from several key players.
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BIOGRAPHY
Shu-Jen Han is a Senior Director of MRAM Technology at HFC Semiconductor Corp. where he oversees overall MRAM technology RD and commercialization. Before joining HFC, he was a manager of Nanoscale Device group at the IBM T. J. Watson Research Center. He holds a Ph.D. in Materials Sci. & Eng. and Ph.D. minor in Electric Eng. from Stanford University (2007), and a B.S. from Tsing-Hua University in Taiwan (1999). He has over 90 technical publications, including multiple publications in Science and Nature series and two book chapters, and over 150 issued US patents. His works have been reported in CNET, BBC, MIT Technology Review, New York Times, Washington Post, and Wall Street Journal etc.
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