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Day1-June 28th, 2020
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08:30-09:15
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Registration/注册
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09:20-09:30
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Welcome Remark/欢迎致辞
Lung Chu 居龙
President, SEMI China
SEMI中国，总裁
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Opening Keynote Session / 开幕主旨演讲
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Moderator/主持人：
David Xiao 肖国伟
CEO, APT Electronics
首席执行官，广东晶科电子股份有限公司
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09:30-10:00
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硅基氮化镓产业发展“芯”机遇
Weiwei Luo 骆薇薇
Board Chair, Innoscience (Zhuhai) Technology Co., Ltd.
董事长，英诺赛科（珠海）科技有限公司
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10:00-10:30
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GaN is Driving Changes in Automotive Systems (Virtual)
氮化镓技术如何推动车载系统的发展进程(Virtual)
Alex Lidow
CEO and Co-founder, Efficient Power Conversion Corporation
首席执行官兼联合创始人，美国宜普电源转换公司
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10:30-11:00
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How Cheap SiC Solution Can Be in The Near Future
碳化硅应用方案可以做到多便宜
Tong Chen 陈彤
CEO, Global Power Technology Co., Ltd.
总经理，泰科天润半导体科技（北京）有限公司
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11:00-11:30
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Enabling Solutions for High Volume Manufacturing of Wide Bandgap Materials
用于宽禁带半导体材料大规模生产的解决方案
Ziwen Fang 方子文
Senior Department Manager, AIXTRON SE
高级部门经理，德国爱思强股份有限公司
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11:30-13:30
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Break (休息)
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Moderator/主持人：
Jiangbo Wang 王江波
VP, HC SemiTek Corporation
副总裁, 华灿光电（浙江）有限公司
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13:30-14:00
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Toward for Ultimate Displays with MicroLED (Virtual)
迈向终极显示技术 – MicroLED (Virtual)
Yun-Li (Charles) Li 李允立
CEO, PlayNitride
首席执行官，錼创科技
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Session: Compound Semiconductor in Optoelectronics, Communications 化合物半导体与光电及5G通讯
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14:00-14:30
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VCSELs and ToF Modules for 3D Sensing
用于三维传感的VCSEL和ToF模块
Xiaochi Chen 陈晓迟
General Manager, Vertilite Co., Ltd
总经理，常州纵慧芯光半导体科技有限公司
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14:30-15:00
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Application of Compound Semiconductor in Millimeter Wave Communication
化合物半导体的毫米波通信应用
Chunjiang Li 李春江
Vice General Manager, Chengdu HiWafer Semiconductor Co., Ltd.
副总经理，成都海威华芯科技有限公司
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15:00-15:30
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NAURA Solutions for Si Epitaxy and SiC Growth Applied for Power Devices (Virtual)
NAURA 的Si外延和SiC材料在功率器件领域的解决方案(Virtual)
Boyu Dong 董博宇
Vice president&CVD Business Unit General Manager, Beijing NAURA Microelectronics Equipment Co.,Ltd
副总裁兼CVD事业部总经理，北京北方华创微电子装备有限公司
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15:30-16:00
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Advanced Plasma Processing Solutions for High Performance VCSELs Focussing on Cost Down Per Wafer and Critical Device Performance
先进等离子加工技术于高性能VCSEL和EEL的解决方案：特征蚀刻和薄膜沉积。降低晶圆成本及关键设备性能
Terry Chen
China Country Manager, Oxford Instruments Plasma Technology
中国区经理，英国牛津仪器
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16:00-16:30
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GaN- A Key Technology for 5G
实现5G的关键技术-GaN
Jenny Xun 荀颖
FAE manager, Qorvo
Qorvo
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Day2-June 29th, 2020
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Session: Wide Band Gap Semiconductors & Emerging Power Devices 宽禁带半导体及新型功率器件
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Moderator/主持人：
Qian Sun 孙钱
Deputy Director, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS
副主任，中国科学院苏州纳米技术与纳米仿生研究所
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09:00-09:30
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Opening Keynote Speech: Latest Packaging Developments Enhance Performance of Silicon Carbide (SiC) Power Devices (Virtual)
用于加强碳化硅功率器件性能的最新封装技术 (Virtual)
Filippo Di Giovanni
STMicroelectronics
意法半导体
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09:30-10:00
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Technical Problems and Research Progress of SiC Power MOSFET
碳化硅功率MOSFET技术问题及研究进展
Song Bai 柏松
Professor, Zhongdian Guoji South Co. , Ltd.
教授级高工，中电国基南方有限公司
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10:00-10:30
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Progress on GaN Epitaxial Technology for New Devices
用于新型器件的GaN外延技术
Kai Cheng 程凯
Board Chair, Enkris Semiconductor, Inc.
董事长，苏州晶湛半导体有限公司
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10:30-11:00
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Recent Advances of ALD Technology for Power & Compound Semiconductor Applications - A Prospect of Innovation and Localization in China
原子层沉积技术在功率及化合物半导体的应用及国产化创新的展望
Wei-Min Li 黎微明
CTO, Jiangsu Leadmicro Nano Technology Co.,Ltd.
首席技术官，江苏微导纳米股份有限公司
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11:00-11:30
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Advances in PVD Techniques for SiC and GaN Power Devices
应用于碳化硅和氮化镓功率器件的PVD技术的进步
Michael Yi 易义军
SPTS Technologies
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11:30-12:00
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ON Semiconductor SiC Solutions for Communications, Electric Vehicles and Solar Inverters
安森美半导体碳化硅(SIC)方案服务于通信、电动汽车、太阳能逆变器等市场
Raymond Wang 王利民
Product Marketing Manager, ON Semiconductor
安森美半导体
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12:00-13:30
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Break (休息)
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Moderator/主持人：
Shunfeng Li 李顺峰
Chief Scientist of Wide Band Gap Materials, CR MICRO
宽禁带材料首席专家, 华润微电子控股有限公司
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13:30-13:55
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Navitas GaN Power ICs Drive Fast Charger Innovation and Market Adoption
纳微高集成氮化镓功率芯片推动快充技术和市场的革新
Charles Zha 查莹杰
VP, General Manager of China, Navitas Semiconductor
副总裁，中国区总经理，纳微半导体
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13:55-14:20
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High Volume Manufacturing of Power Technologies (Virtual)
功率技术的高产能制造(Virtual)
Dustin Ho 何文彬
Technical Director, Silicon Product Group, Applied Materials, Inc
半导体产品事业部技术总监，应用材料公司
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14:20-14:45
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Progress in Study and Industrialization of Wide Bandgap Semiconductor SiC Substrate
宽禁带半导体碳化硅衬底研究和产业进展
Chunjun Liu 刘春俊
Vice President, CTO, TankeBlue Semiconductor Co., Ltd.
副总经理、技术总监，北京天科合达半导体股份有限公司
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14:45-15:10
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Smart Integrations Maximizes the Performance of GaN Switches – Addressing the Challenge of Driving GaN
智能集成最大化地提升了氮化镓开关性能-谈谈驱动氮化镓面临的挑战
Ye Xu 徐晔
Power Integrations, Inc.
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15:10-15:35
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Development of High Power SiC Power Modules for NEV and Traction Application (Virtual)
用于新能源汽车和牵引应用的大功率SiC功率模块开发(Virtual)
Allen Wang 王浩
Technical Support Specialist, ABB China
技术支持专家，ABB中国
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15:35-16:00
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Closing Keynote: 200mm/8-inch GaN Power Device and GaN-IC Technology: A New Opportunity for Wafer Suppliers, Foundries and IDMs (Virtual)
8英寸GaN功率器件及IC技术：晶圆供应商、代工厂、IDM厂商的新机遇 (Virtual)
Denis Marcon
IMEC
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16:00-16:20
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Lucky Draw 幸运抽奖
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