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Symposium I: Device Engineering and Technology

(** to designate keynote talk, * to designate invite talk)

  

Sunday, March 13, 2016 Shanghai International Convention Center

Meeting Room3B

 

Session I: Memory Technology - I

Session Chairs: Ru Huang, Huaqiang Wu

 

**13:30-14:00

Memory Devices in Computing

Chung Lam, IBM

 

**14:00-14:30

The Outlook for New Memory Technology

Gary Bronner, Rambus

 

**14:30-15:00

Memristor Mates Enable Memory and Neuromorphic Applications

Jianhua Joshua Yang, University of Massachusetts

 

*15:00-15:25

 

Future Brain-like Computing with Non-volatile Memory Device

Yu Hao, Nanyang Technological University

 

15:25-15:40

Coffee Break

 

Session II: Memory Technology - II
Session Chair: Huaqiang Wu

 

*15:40-16:05

TBD

Zhitang Song, SIMS CAS

 

16:05-16:20

DRAM Failures in the field:  An update on Row Hammer

Barbara P Aichinger, FuturePlus Systems

 

16:20-16:35

Applying Optimal Design of Experiment in Reversed Self-aligned

Contact Etch Of NOR Flash for Profile Performance Improvement

Erhu Zheng, SMIC

 

 

Poster Session:

Location: Foyer of Yangtze River Hall

 

Coffee Break

An accurate scalable model for 700V LDMOS

Pingliang Li, HHGrace

 

 

Characterization FinFET Device Layout Dependent Effect

Xinyun Xie, SMIC

 

 

Improved NBTI Characteristic of HKMG FinFET with Thermal Oxidized

Interlayer and Post Interlayer Anneal

Xin He, SMIC

 

 

Study on Different Abrasives Effect in Sapphire Chemical-Mechanical

Polishing

Xiaohua Zhu, Jiangsu Tianheng Nanometer technology Co.,Ltd

 

 

 

Sapphire roughness CMP process control technology

Ding Li, Jiangsu Tianheng Nanometer Technology Co.,Ltd

 

 

Process conditions affected chemical mechanical polishing (CMP)

 on sapphire

Rongrong Qin, Jiangsu Tianheng Nanometer Technology Co.,Ltd

 

 

The production and application of Nanoscale materials silica

Zhou Zheng, Jiangsu Tianheng Nanometer technology Co.,LTd

 

 

A High-Fill-Factor SPAD Array Cell With A Shared Deep N-Well

Yang Huang, Nanjing University of Posts and Telecommunications

 

 

Development on High-precision Microelectronic Assembly

Gary Chen, Suzhou Etron Electronics Co. Ltd.

 

 

Resolving Plasma Induced Damage for A CMOS Embedded-OTP

Technology

Xiaobo Duan, SMIC

 

 

Impacts of Random Telegraph Noise (RTN) on the Energy-delay

Tradeoffs of  Logic Circuits

Yang Zhang, Peking University

 

 

Monday, March 14, 2016  Shanghai International Convention Center

Meeting Room: 3B

Session III: Device Reliability and Noise Characteristics

Session Chair: Huilong Zhu

 

8:50-9:05

Low frequency noise and fin width study of Silicon passivated Germanium

Pfinfets

Alberto Vinicius de Oliveira, IMEC, University of Sao Paulo

 

 

**9:05-9:35

Compact Modeling of Junction Failure in Semiconductor Devices

Subject to Electrostatic Discharge Stresses

Juin J. Liou, University of Central Florida

 

*9:35-10:00

Engineering Graphene for Transistors and Interconnects

Moon-Ho Ham, Gwangju Institute of Science and Technology

 

10:00-10:15

Coffee Break

 

Session IV: Novel Solid State Devices

Session Chair: Cor Claeys

 

**10:15-10:45

 

CMOS Device Benchmarks and Transition-Metal Dichalcogenide Device

Hitoshi Wakabayashi, Tokyo Institute of Technology

 

*10:45-11:10

Flexible 2D Semiconducting Electronics

Sunkook Kim, Kyung Hee University

 

*11:10-11:35

SiGe/Si Tunnel FETs

Qingtai Zhao, Peter Grünberg Institute

 

*11:35-12:00

The Effects of Materials and Process on the Electrical Characteristics

of Tunneling FETs

Changhwan Choi, Hanyang Universiy

 

12:00-13:30

Lunch Break

 

Session V: Advanced Device and Process Technology

Session chair: Hong Wu

 

*13:30-13:55

Gate and source/drain engineering in Ge device technology

Ming Li, Peking University

 

13:55-14:10

A Study of Narrow Transistor Layout Proximity Effects for 28nm

POLY/SION Logic Technology

Ruoyuan Li, SMIC

 

14:10-14:25

Impact of STI stress on 40-nm Dogbone Layout n-MOSFETs

Wang Liu, ShangHai Research Institute of MicroElectronics (SHRIME),

Peking University

 

14:25-14:40

Contact Resistance between Graphene and Metal

Ce Yang, Peking University

 

14:40-14:55

A New Extraction Method of Parasitic Resistance for Poly-Connected MOSFETs

Haohua Ye, SMIC

 

    

 

 

  

 

 

 

 

 

 

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