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Symposium VI: Materials and Process Integration for Device and Interconnection
(joint session with Symposium IV)
 

Symposium Committee

Dr. Jiang Yan
Chairman

Institute of Microelectronics, CAS

Mr. Zhen Guo
Co-Chair
 Technologist,Intel, China

Dr. Ran LIU
Co-Chair

Fudan University, China

Dr. Sowmya KRISHNAN
Co-Chair

SEMITRAC USA

Dr. Jianhua Ju
Member

 Assistant Director, SMIC Tech R&D

Dr. Massayasu TANJYO
Member

Nissin Ion Equipment,Japan

Dr. Ganming ZHAO
Member

Applied Materials

Dr. Zheyao Wang
Member

Tsinghua University, China

Dr. Jiaxiang Nie
Member

 Lam Research, USA

Dr. Da Zhang
Member

Freescale,USA

Dr. Larry Zhao
Member

Lam Research, USA

Symposium VI: Materials and Process Integration for Device and Interconnection

  • Key process module development and integration

  • Materials for 45 nm, 32 nm and 22 nm nodes of semiconductor manufacturing

  • Reliability of copper/low-k interconnect

  • High-k/metal gate and future transistors

  • Plasma assisted material processes

  • Implantation and millisecond anneal

  • Strained silicon process and integration

  • Cleaning technology in manufacturing

  • Innovative metrology for 45nm and beyond
 

 

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