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Symposium IV: Thin Film, Plating and Process Integration

 Symposium Committee

Dr. Zhen Guo
Chair

Intel, China

Dr. Beichao Zhang
Co-Chair
SMIC, China
Mr. Xiaoping SHI
Co-Chair
IMEC, Belgium
Dr. Chao Zhao
Co-Chair
IME, CAS, China
Dr. Huang Liu
Co-Chair
Global Foundries, USA
Dr. Jiang Yan
Co-Chair
Institute of Microelectronics, CAS
Dr. Ran LIU
Co-Chair
Fudan University, China
Dr. Sowmya KRISHNAN
Co-Chair
SEMITRAC, USA
Dr. Jason TIAN
Member
Nikon Precision, China
Dr. Jon REID
Member
Novellus, USA
Prof. YuLong JIANG
Member
Fudan University, China
Dr. Li-Qun Xia
Member
AMAT, USA
Dr. Julian Hsieh
Member
ASM, Taiwan
Dr. Chih-Chao Yang
Member
IBM
Dr. Jianhua Ju
Member
SMIC, China
Dr. Massayasu Tanjyo
Member
Nissin Ion Equipment, Japan
Dr. Ganming Zhao
Member
Applied Materials
Dr. Zheyao Wang
Member
Tsinghua University, China
Dr. Da Zhang
Member
AMD, USA
Dr. Larry Zhao
Member
Lam Research, USA
Dr. Jiaxiang Nie
Member
Lam Research, China

Symposium  IV: Thin Film, Plating and Process Integration

  • High k gate dielectrics and metal gates thin film materials, processes and integration schemes
  • Thin film processes and materials for straining engineering, including SiGe, SiC, stress liners and SMT
  • Advanced channel materials, such as Ge and III/V channels, related topics and integration schemes, including Ge passivation.
  • Processes, properties, integration and reliability for low k dielectric materials
  • Thin film processes and materials for high aspect ration gap fill
  • Self-aligned silicides, Schottky barrier source/drain and advanced contact technologies
  • Cleaning technology in manufacturing
     
     
  • Innovative metrology for 45nm and beyond
  • Electroplating and electroless deposition materials and processes
  • Silicon nanowire, carbon nanotube, graphene or other new materials for FET, metallization, dielectrics, contacts, strain and channels.
  • Key process module development and integration
  • Materials for 45 nm, 32 nm and 22 nm nodes of semiconductor manufacturing
  • Strained silicon process and integration
  • Reliability of copper/low-k interconnect
  • High-k/metal gate and future transistors
  • Plasma assisted material processes
  • Implantation and millisecond anneal

 

 

 

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