首页   :    半导体技术大会 :    论文征集/投稿



Symposium IV:Thin film and Process Integration
 

 

 

Symposium Committee 

 

Dr. Beichao Zhang
Chariman

SMIC, China

Mr. Xiaoping SHI
Co-Chair

IMEC, Belgium

Dr. Chao Zhao
Co-Chair

IME,CAS, China

Dr. Jason TIAN
Member

Nikon Precision, China

Dr. Jon REID
Member

Novellus, USA

Prof. YuLong JIANG
Member

Fudan University, China

Dr. Huang Liu
Member

Global Foundries, USA

Dr. Li-Qun Xia
Member
 AMAT, USA
Dr.Julian Hsieh
Member
 ASM, Taiwan

Symposium IV: Thin Film Technology

  • High k gate dielectrics and metal gates thin film materials, processes and integration schemes

  • Thin film processes and materials for straining engineering, including SiGe, SiC, stress liners and SMT

  • Advanced channel materials, such as Ge and III/V channels, related topics and integration schemes, including Ge passivation.

  • Processes, properties, integration and reliability for low k dielectric materials

  • Thin film processes and materials for high aspect ration gap fill

  • Self-aligned silicides, Schottky barrier source/drain and advanced contact technologies

  • Electroplating and electroless deposition materials and processes

  • Silicon nanowire, carbon nanotube, graphene or other new materials for FET, metallization, dielectrics, contacts, strain and channels.


 

 

沪ICP备06022522号沪公网安备31011502010679号