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Symposium I: Device Engineering and Memory Technology 

Symposium Committee

Dr. Ru HUANG
Chair

Peking University, China

Dr. Cor CLAEYS
Co-Chair
IMEC, Belgium

Dr. Minhwa Chi
Co-Chair

SMIC, China
Dr. Ming LIU
Co-Chair
 IME, CAS, China
Dr. Chung Lam
Co-Chair
IBM T. J. Watson Research Center, USA
Dr. Fred Chen
Member
Industrial Technology Research Institute, Taiwan
Prof. Jong-Ho Lee
Member
Seoul National University, Korea
Dr. Shaoning MEI
Member
Wuhan Xinxin Semiconductor Manufacturing Corp, China
Dr. Wensheng Qian
Member
HHGrace, China
Dr. Huiling SHANG
Member
TSMC
Dr. Hong WU
Member
SMIC, China
Dr. Huaqiang Wu
Member
Tsinghua University
Dr. Frank Bin Yang
Member
Qualcomm, USA
Dr. Huilong Zhu
Member
IME, CAS, China

Symposium I: Device Engineering and Memory Technology          

  • Advanced MOS devices and technology 
     
  • Memory technology (DRAM, SRAM, Flash, emerging memory technology)
  • Device reliability and variability 
  • Source/drain engineering
  • steep-slope devices
  • 2D material devices
  • RF/HV/Power devices
  • Other emerging devices
 
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