邱汉钦
英诺赛科(珠海)科技有限公司,工艺研发副总经理

个人简介

Professional Summary
Over 10yrs experience on GaN based devices process development and successful delivery of technology transfer into production. Atomic-Layer-Deposition (ALD) high-k and metal materials R&D for both advanced and specialty technologies.

Education
  •  Bachelor, 2002-2005
     Chemical Engineering, National Cheng-Kung University, Taiwan
  •  Master, 2005-2007
     Materials Science and Engineering, National Cheng-Kung University, Taiwan
  •  PhD, 2007-2011
     Materials Science and Engineering, National Tsing-Hua University, Taiwan

Experience
  •  [2011] – [2018]>
     Specialty Technology R&D, TSMC, Taiwan.>
     R&D module of GaN power & RF devices>
     R&D module of High-k dielectric technology>
     R&D module – ALD, CVD, PVD, & CMP advanced process>
  •  [2018] – Now>
     Innoscience (Zhuhai) Technology Co., Ltd.>
     Vice President of R&D module and FAB Manager>

摘要

Gallium nitride (GaN) HEMTs are the most promising candidates for the next-generation power devices with features of high breakdown strength and fast switching speed as well as low on-resistance. In the past 10 years or so, commercialization of GaN-on-Si power devices has been demonstrated. In particular, CMOS compatible 8 inch GaN-on-Si technology can provide low cost, high-volume production, and high-performance and stable products. Innoscience (Zhuhai) technology Co., Ltd. has successfully developed 8” GaN-on-Si power devices covering 30-650V for next generation power applications.