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Chinese
2018年3月14-16日
上海新国际博览中心

Dr. Huilong Zhu

Dr. Huilong Zhu
IME, China

Professor Huilong Zhu is Chief Scientist of IC Advanced Process R&D Center, the Institute of Microelectronics of Chinese Academy of Sciences, and is responsible for advanced CMOS technology research.

Professor Zhu obtained his B.S. in 1982 in physics at the University of Science and Technology of China, Anhui, China, and his Ph.D in 1988 in physics at the Beijing Normal University, Beijing, China. He worked at Argonne National Laboratory in 1990-1992, University of Illinois at Urbana-Champaign in 1992-1996, Digital Equipment Corporation in 1996-1998, Intel in 1998-2000, and IBM in 2000-2009. He joined the Institute of Microelectronics of Chinese Academy of Sciences in 2009.

Professor Zhu is an IBM Corporate Leading Inventor and an IBM Master Inventor. He is co-inventor of Dual Stress Liner Technique and Stress Proximate Technique, which have been widely used to enhance CMOS performance. He is also co-inventor to use recessing gate to enhance stress in the channel of a strained MOSFET, which is applied, as a key technology, to high-k metal gate CMOS products.

Professor Zhu is one of pioneer researchers of molecular-dynamics-simulation and theoretical modeling of nano-particle interaction. He first applied molecular dynamics simulation to study of nano-particle sintering and discovered super-fast sintering (within a few tens pico-second) and rotating of nano-particles by dislocation generation due to high stress. He developed a model for Ge and Sb diffusion in Si1-xGex system and, for the first time, excellent agreement to experimental data was achieved in a large range of Ge fractions and annealing temperatures.

Professor Zhu has 125 issued US patents and over 40 technical papers.