Dr. Hsiang-Lan Lung
Dr. Hsiang-Lan Lung holds a Ph. D. degree of Materials Science and Engineering from National Tsing Hua University. He join Macronix in Hsinchu Science Park Taiwan in 1996, where he worked for developing the 0.5um CMOS logic technology, 0.45um embedded Flash technology, 0.35um SONOS memory technology and FeRAM technology.
From 2004 to now, he has been working at IBM T. J. Watson Research Center in New York USA to develop the Phase-change memory (PCM) technology. He serves as a project manager to develop different kinds of PCM technologies which include SRAM interface PCM for working memory applications, LPDDR2 PCM for mobile platform applications, SPI PCM for embedded system applications and DDR2 PCM for Storage-class memory application. His current goal is to develop a 20nm low power PCM memory cell technology in IBM Research Yorktown Heights. He also supervises the R&D work of RRAM technologies in Macronix.
Dr. Lung has granted more than 200 US patents so far. He authored and co-authored more than 60 technical papers which include 27 papers in IEDM/VLSI and gave various invited talks and short causes in international semiconductor conferences for example: MRS, IMW, ICMTD, ICSICT, CSTIC and ITRS. He was elected as an IEEE senior member in 2007 and served as a technical committee member in Memory Technology of IEDM from 2012 to 2013. He is currently the deputy director for nano-technology R&D Div of Macronix.