Dr. Kinam Kim
Kinam Kim received his BS in electronic engineering in 1981 from Seoul National University and his MS in electrical engineering from the KAIST (Korea Advanced Institute of Science and Technology) in 1983. He received his Ph.D. degree in electrical engineering from the University of California Los Angeles, CA. in 1994. Dr. Kim joined Samsung Electronics Co., Ltd. In 1981, where he lead the development of various memory technologies (64Kb to 4Giga-bit densities for DRAM, 2Gb to 32Gb and beyond for NAND Flash, and emerging new memories such as PRAM) and other important technologies like CMOS Image Sensor for almost 30 years. During this time he awarded the grand prize of the Samsung Group twice in 1986 and 1996 for his achievements on 1Mb DRAM and 1Gb DRAM. He successfully led and was awarded for the development of 2Gb, 4Gb, 8Gb, 16Gb and 32Gb NAND Flash. He has published more than 430 technical papers and over 130 patents. He is an IEEE fellow and a Samsung fellow. He has shown his leadership in the semiconductor fields through plenary talks, invited speeches and participating in the panel discussions in VLSI technology symposiums, IEDM, ISSCC among others. He has been the recipient of ISI’s citation award for highly cited paper, 2008 Professional Achievement award of UCLA School of Engineering, IEEE Reynold B. Johnson Storage data device technology award in 2009, to name a few. He has also received the Gold Tower order of Industrial Service Merit from the Korean government in 2010.